Organic Single-Crystalline p–n Heterojunctions for High-Performance Ambipolar Field-Effect Transistors and Broadband Photodetectors

材料科学 光电探测器 双极扩散 异质结 光电子学 宽带 场效应晶体管 晶体管 有机半导体 光学 电子 电气工程 量子力学 物理 工程类 电压
作者
Xiaoming Zhao,Tianjun Liu,Hongli Liu,Shirong Wang,Dong An,Yuteng Zhang,Xueyan Hou,Zilu Liu,Wenda Shi,T. John S. Dennis
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:10 (49): 42715-42722 被引量:32
标识
DOI:10.1021/acsami.8b12832
摘要

Organic semiconducting single crystals are ideal building blocks for organic field-effect transistors (OFETs) and organic photodetectors (OPDs) because they can potentially exhibit the best charge transport and photoelectric properties in organic materials. Nevertheless, it is usual for single-crystal OFETs to be built from one kind of organic material in which the dominant transport is either electron or hole; such OFETs show unipolar charge transport. Furthermore, single-crystal OPDs present high performance only in restricted regions because of the limited absorption of one-component single crystals. In an ideal situation, devices which comprise both electron- and hole-transporting single crystals with complementary absorptions, such as single-crystalline p-n heterojunctions (SCHJs), can permit broadband photoresponse and ambipolar charge transport. In this paper, a solution-processing crystallization strategy to prepare an SCHJ composed of C60 and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) was shown. These SCHJs demonstrated ambipolar charge-transport characteristics in OFETs with a balanced performance of 2.9 cm2 V-1 s-1 for electron mobility and 2.7 cm2 V-1 s-1 for hole mobility. This demonstration is the first of single-crystal OFETs in which both electron and hole mobilities were over 2.5 cm2 V-1 s-1. OPDs fabricated upon as-prepared SCHJs exhibited highly sensitive photoconductive properties ranging from ultraviolet to visible and further to near-infrared regions as a result of complementary absorption between C60 and TIPS-PEN, thereby attaining photoresponsivities that are among the highest reported values within the OPDs. This work would provide valuable references for developing novel SCHJ systems to achieve significant progress in high-performance ambipolar OFETs and broadband OPDs.

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