桥接(联网)
材料科学
阳极
可扩展性
非易失性存储器
电阻随机存取存储器
导电体
光电子学
阴极
惰性
纳米技术
纳米尺度
可靠性(半导体)
电解质
电阻式触摸屏
作者
Michael Kund,Gerhard Beitel,C. U. Pinnow,Thomas Rohr,J. Schümann,R. Symanczyk,K.-D. Ufert,Gilles Muller
出处
期刊:International Electron Devices Meeting
日期:2005-12-05
被引量:137
标识
DOI:10.1109/iedm.2005.1609463
摘要
We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between an oxidizable anode and an inert cathode. Low power resistive switching operation, the large scalability potential including multi-level-capability (MLC) and the investigated reliability aspects, like retention at elevated temperature, operating temperature and endurance, make CBRAM a very promising non-volatile emerging memory technology
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