Schottky Barriers, Measurement and Modeling

Abstract The Schottky barrier, one of the earliest and simplest semiconductor of interfaces studied, consists of a metal in contact with a semiconductor. It is named after Walter Schottky, who in the 1930s developed a comprehensive theory of such contacts, and traced their properties to the electrical barrier that forms at the metal–semiconductor ( MS ) interface. If the barrier height is relatively large, the current–voltage ( I – V ) characteristics exhibit an asymmetrical rectifying behavior, while a symmetrical linear I – V response results from a low barrier. The rectifying MS contact is called the Schottky diode, whereas the non‐rectifying device is simply referred to as an ohmic contact.