Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM
作者
A. Driskill-Smith,Dmytro Apalkov,V. Nikitin,X. Tang,Steven Watts,D. K. Lottis,Kibong Moon,A. V. Khvalkovskiy,Roland Kawakami,X. Luo,A. Ong,E. Chen,M. Krounbi
标识
DOI：10.1109/imw.2011.5873205
摘要
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and outline STT-RAM's future prospects, applications and roadmap.
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(2025-6-4)
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