异质结
薄脆饼
材料科学
整改
光电子学
半导体
光电流
面(心理学)
十二面体
纳米技术
结晶学
化学
电气工程
社会心理学
工程类
心理学
电压
人格
五大性格特征
作者
An‐Ting Lee,Chih Shan Tan,Michael H. Huang
出处
期刊:ACS central science
[American Chemical Society]
日期:2021-10-26
卷期号:7 (11): 1929-1937
被引量:18
标识
DOI:10.1021/acscentsci.1c01067
摘要
Conductive atomic force microscopy (C-AFM) was employed to perform conductivity measurements on a facet-specific Cu2O cube, octahedron, and rhombic dodecahedron and intrinsic Si {100}, {111}, and {110} wafers. Similar I-V curves to those recorded previously using a nanomanipulator were obtained with the exception of high conductivity for the Si {110} wafer. Next, I-V curves of different Cu2O-Si heterostructures were evaluated. Among the nine possible arrangements, Cu2O octahedron/Si {100} wafer and Cu2O octahedron/Si {110} wafer combinations show good current rectification behaviors. Under white light illumination, Cu2O cube/Si {110} wafer and Cu2O rhombic dodecahedron/Si {111} wafer combinations exhibit the largest degrees of photocurrent, so such interfacial plane-controlled semiconductor heterojunctions with light sensitivity can be applied to make photodetectors. Adjusted band diagrams are presented highlighting different interfacial band bending situations to facilitate or inhibit current flow for different Cu2O-Si junctions. More importantly, the observation of clear current-rectifying effects produced at the semiconductor heterojunctions with properly selected contacting faces or planes implies that novel field-effect transistors (FETs) can be fabricated using this design strategy, which should integrate well with current chip manufacturing processes.
科研通智能强力驱动
Strongly Powered by AbleSci AI