Realization of exciton-polariton condensation in GaAs-based microcavity grown by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying exciton-polariton condensation and developing polaritonic devices, although it is a powerful mass productive method for practical applications. Here, we demonstrate that the MOCVD-grown GaAs-based microcavity can realize the nonequilibrium condensation of exciton-polariton. We obtained the Rabi splitting values of 10.1 meV in the angle-resolved reflectance spectrum from the MOCVD-grown microcavity. And, we also measured the angle-resolved photoluminescence depending on pumping power to observe condensation behaviors. Furthermore, we found that the occupancy distributions of polaritons are in a nonequilibrium state by fitting Bose-Einstein distributions. To realize the strong coupling and exciton-polariton condensation, we reduced the linewidth broadening of photoluminescence from quantum wells by optimizing growth conditions and designs.