Near zero-field magnetoresistance and defects in gallium nitride pn junctions

As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.