抗血小板
材料科学
氮化物
带隙
钙钛矿(结构)
酰亚胺
电子能带结构
密度泛函理论
光电子学
结晶学
化学
纳米技术
凝聚态物理
图层(电子)
计算化学
物理
高分子化学
作者
Thanh Chau,Dan Han,Florian Wolf,Stefan S. Rudel,Yuxuan Yao,Harald Oberhofer,Thomas Bein,H. Ebert,Wolfgang Schnick
标识
DOI:10.1002/anie.202500768
摘要
Abstract An abundance of oxide, halide and chalcogenide perovskites have been explored, demonstrating outstanding properties, while the emerging nitride perovskites are extremely rare due to their challenging synthesis requirements. By inverting the ion type in the perovskite structure, the corresponding antiperovskite structure is obtained. Among them, ternary antiperovskite nitrides X 3 A N ( X =Ba, Sr, Ca, Mg; A =As, Sb) have recently been identified as exhibiting excellent optoelectronic properties. To explore the unrealized composition space of nitride perovskites, the ammonothermal method was applied, yielding three new layered quaternary imide‐based defect‐antiperovskites, namely AE 5 As Pn (NH) 2 ( AE =Ca, Sr; Pn =Sb, Bi). These new compounds feature distorted square‐pyramidal coordination around the imide‐group (Ca 5 NH). Layers with Ca 2+ vacancies are found with an alternating As 3− and Pn 3− ( Pn 3− =Sb 3− , Bi 3− ) coordination along the A ‐site, forming a two‐dimensional (2D) structure. All three AE 5 As Pn (NH) 2 compounds show suitable direct band gaps within the visible light spectrum. Density functional theory calculations reveal favorable band dispersion, as well as transport and optical properties, especially along the out‐of‐plane direction, demonstrating their 3D character of electronic transport. The narrow tunable direct band gaps and favorable charge carrier properties make AE 5 As Pn (NH) 2 promising candidates for solar cell absorber materials.
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