物理不可克隆功能
记忆电阻器
加密
计算机科学
嵌入式系统
材料科学
密码学
电子工程
计算机安全
工程类
作者
Jea Min Cho,Seungsoo Kim,Tae Won Park,Dong‐Hoon Shin,Yeong Rok Kim,Hyungjun Park,Dong Yun Kim,Soo Hyung Lee,Taegyun Park,Cheol Seong Hwang
出处
期刊:Nanoscale horizons
[Royal Society of Chemistry]
日期:2024-11-07
卷期号:10 (1): 113-123
被引量:3
摘要
This study demonstrated the potential of vertically stacked resistive random access memory (V-RRAM) as a hardware security solution, capable of performing both key generation and encryption.
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