材料科学
半导体
硼
热导率
砷化镓
电子迁移率
光电子学
半导体器件
电导率
工程物理
纳米技术
化学
物理
复合材料
物理化学
核物理学
图层(电子)
作者
Shuai Yue,Fei Tian,Bai Song,Yangguang Zhong,Jiming Bao,Xinfeng Liu
出处
期刊:Matter
[Elsevier BV]
日期:2025-05-01
卷期号:8 (5): 102131-102131
被引量:5
标识
DOI:10.1016/j.matt.2025.102131
摘要
Summary
Over the past decade, cubic boron arsenide (BAs) has emerged as a highly promising semiconductor owing to its extraordinary thermal conductivity (1,200 W/m·K) and high ambipolar mobility (1,600 cm2/V·s). This unique combination has spurred significant research interest in its potential for advanced device applications. However, the challenge of growing uniform, high-quality crystals has hindered its widespread adoption, limiting its realization in high-performance devices. To accelerate the development and utilization of BAs, we systematically review recent theoretical and experimental advancements, focusing on key aspects such as carrier mobility, carrier relaxation, and the impact of defects on thermal conductivity and carrier mobility. Additionally, we explore emerging applications, persistent challenges, and future research directions. By addressing these critical issues, we aim to inspire further research and facilitate the development of next-generation electronic and optoelectronic devices based on BAs.
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