外延
材料科学
基质(水族馆)
图层(电子)
硅化物
沉积(地质)
硅
化学气相沉积
矿物学
结晶学
冶金
光电子学
纳米技术
化学
地质学
古生物学
海洋学
沉积物
作者
T. Aizawa,Shigeki Otani,I. Ohkubo,Takao Mori
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2015-09-10
卷期号:33 (6)
被引量:1
摘要
ZrC epitaxy was examined on ZrC(111) (homoepitaxy) and on several reconstructed Si(111) surfaces using physical vapor deposition: clean 7 × 7, 3×3-Al, 3×3-Ga, and 3×3-Ag. Layer-by-layer homoepitaxy was realized at a temperature as low as 400 °C on clean ZrC(111). Even at room temperature, it grew epitaxially although the surface became rough. On a Si(111) substrate at 400–600 °C, ZrC grew epitaxially but with a rough surface. Above 800 °C, ZrC and Si reacted to produce other silicide phases. The epitaxial relation was (111)ZrC∥(111)Si and [11¯0]ZrC∥[11¯0]Si, cube-on-cube, which was not influenced by the substrate reconstruction. Actually, Si was detected on all film surfaces grown at temperatures above 400 °C, which was probably diffused from the substrate onto the surface. The authors clarified an important problem: surface-segregated Si disturbs the layer-by-layer epitaxy of ZrC.
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