Viable route towards large-area 2D MoS 2 using magnetron sputtering

Abstract Structural, interfacial, optical, and transport properties of large-area MoS 2 ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS 2 properties. Few layers of MoS 2 are established using x-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants show very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS 2 films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS 2 films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.