金属有机气相外延
光电子学
化学气相沉积
量子阱
材料科学
外延
激光器
砷化镓
光学
纳米技术
物理
图层（电子）
作者
Hung-Pin D. Yang,I‐Liang Chen,Chen-Hong Lee,Chih-Hong Chiou,Tsin-Dong Lee,I-Chen Hsu,Fang‐I Lai,Gray Lin,Hao‐Chung Kuo,Jim Y.
摘要
We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
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(2025-6-4)
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