Recent advances in GaN-based semiconductor lasers

Abstract III-nitride semiconductor lasers have made remarkable progress in recent years, particularly thanks to their ability to be tuned from the ultraviolet to the infrared. This comprehensive review explores the latest developments in GaN-based semiconductor lasers, with a specific focus on edge-emitting laser, vertical-cavity surface-emitting laser, photonic crystal or nanocrystal surface-emitting laser, and whispering gallery mode laser diodes. The review delves into each laser type’s distinctive properties and potential applications, evaluating their performance while identifying current challenges. Finally, this review aims to shed light on challenges and prospects in GaN-based laser development.