Controllable unidirectional magnetoresistance in ferromagnetic films with broken symmetry

Spin-related unidirectional magnetoresistance (UMR) exhibits nonreciprocal transport to either charge current or magnetization reversal, providing a potential application for direct electrical readout of in-plane magnetization using simple two-terminal geometry. To achieve such a UMR, it is usually believed that an adjacent heavy metal or other materials with strong spin-orbit coupling (SOC) as the spin polarizer is indispensable, leading to most efforts on multilayer structures rather than single-layer ferromagnetic films. Here, we report the observation of UMR in a single CoPt film by introducing a vertical composition gradient to break the structural inversion symmetry. Moreover, unlike conventional heavy-metal/ferromagnetic-metal bilayer films, the UMR in the CoPt film with a positive Co composition gradient is controllable as a function of current amplitude, which shows the decrease, sign reversal, and then enhancement with the increment of current density. These results reveal two competing UMR mechanisms with opposite signs in electrical current dependency, i.e., bulk Rashba effect induced by composition gradients and anomalous Nernst effect driven by a vertical temperature gradient. Our work provides a promising way to manipulate the UMR in a single ferromagnetic film with the combination of charge-spin conversion and magnetothermal effect.