光催化
催化作用
材料科学
吸附
氢
析氧
氧气
化学工程
空位缺陷
制氢
光化学
分解水
电子结构
可见光谱
带隙
量子效率
载流子
纳米技术
光催化分解水
化学
比表面积
氧化还原
化学稳定性
量子点
降级(电信)
多相催化
电子能带结构
作者
Kening Xiang,Haoyu Wang,Yuhao Hong,T T LIU,Cuizhu Li,Yared Daniel Reta,Yeshitla Tsegaw Gizaw,Dongfang Lu,Dong–Hau Kuo,Jinguo Lin,Xiaoyun Chen
出处
期刊:Chemsuschem
[Wiley]
日期:2026-06-15
卷期号:19 (12): e70804-e70804
被引量:15
摘要
Herein, a simple and environmentally benign synthetic strategy is developed to construct a hydrazine‐regulated Bi/S co‐doped CeVO 4 trimetallic sulfur‐oxide photocatalyst (Bi/S‐CeVO 4 ). The resulting material features abundant oxygen vacancy (Vo) defects and stabilized multivalent Ce 3+ /Ce 4+ and V 4+ /V 5+ states, which synergistically enhance photocatalytic hydrogen evolution reaction (PHER) performance under visible light irradiation. Band structure analyses indicate that Bi/S co‐doping effectively modulates the electronic structure of CeVO 4 , leading to improved photocatalytic performance toward PHER. The coexistence of multivalent Ce 3+ /Ce 4+ and V 4+ /V 5+ species provides efficient electron‐hopping pathways, facilitating photogenerated charge separation and transfer while prolonging carrier lifetime. In addition, Vo defects served as catalytic sites for water‐molecule adsorption and activation, further accelerating surface reaction kinetics. Benefiting from these synergistic effects, the optimized Bi/S‐CeVO 4 ‐3, featuring the highest electrochemically active surface area of 0.0015 cm 2 and Vo concentration of 24.5%, and suitable ratio of Ce 4+ /(Ce 3+ +Ce 4+ ) (41.8%) and V 4+ /(V 4+ +V 5+ ) (38.5%), delivers the highest PHER rate of 1514.7 μmol·h –1 , with an apparent quantum efficiency (AQE) x‐ray diffraction of 15.28% at 420 nm. Moreover, the catalyst demonstrates excellent stability and durability. This work presents a feasible and effective strategy for electronic structure and defect engineering of CeVO 4 ‐based photocatalysts to achieve efficient solar‐driven hydrogen evolution.
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