单层
材料科学
半导体
空位缺陷
晶体管
电子迁移率
格子(音乐)
密度泛函理论
光电子学
纳米技术
凝聚态物理
化学物理
电压
计算化学
物理
化学
量子力学
声学
作者
Xiankun Zhang,Qingliang Liao,Zhuo Kang,Baishan Liu,Xiao-zhi Liu,Yang Ou,Jiankun Xiao,Jia Du,Yihe Liu,Li Gao,Lin Gu,Mengyu Hong,Huihui Yu,Zheng Zhang,Xiangfeng Duan,Yue Zhang
标识
DOI:10.1002/adma.202007051
摘要
Abstract Monolayer 2D semiconductors (e.g., MoS 2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS 2 , an unusual mobility enhancement is obtained and a record‐high carrier mobility (>115 cm 2 V −1 s −1 ) is achieved, realizing monolayer MoS 2 transistors with an exceptional current density (>0.60 mA µm −1 ) and a record‐high on/off ratio >10 10 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy‐enhanced transport originates from a nearest‐neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined.
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