材料科学
钙钛矿(结构)
光电探测器
光电子学
薄膜
氧化铟锡
卤化物
铟
电致发光
图层(电子)
纳米技术
化学工程
无机化学
工程类
化学
作者
Wei Hu,Wei Huang,Shuzhen Yang,Xiao Wang,Zhenyu Jiang,Xiaoli Zhu,Hong Zhou,Hongjun Liu,Qinglin Zhang,Xiujuan Zhuang,Junliang Yang,Dong Ha Kim,Anlian Pan
标识
DOI:10.1002/adma.201703256
摘要
Abstract Organometal halide perovskites are new light‐harvesting materials for lightweight and flexible optoelectronic devices due to their excellent optoelectronic properties and low‐temperature process capability. However, the preparation of high‐quality perovskite films on flexible substrates has still been a great challenge to date. Here, a novel vapor–solution method is developed to achieve uniform and pinhole‐free organometal halide perovskite films on flexible indium tin oxide/poly(ethylene terephthalate) substrates. Based on the as‐prepared high‐quality perovskite thin films, high‐performance flexible photodetectors (PDs) are constructed, which display a n R value of 81 A W −1 at a low working voltage of 1 V, three orders higher than that of previously reported flexible perovskite thin‐film PDs. In addition, these flexible PDs exhibit excellent flexural stability and durability under various bending situations with their optoelectronic performance well retained. This breakthrough on the growth of high‐quality perovskite thin films opens up a new avenue to develop high‐performance flexible optoelectronic devices.
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