记忆电阻器
材料科学
纳米技术
基质(水族馆)
神经形态工程学
云母
柔性电子器件
光电子学
灵活性(工程)
介观物理学
计算机科学
电子工程
复合材料
人工智能
物理
工程类
地质学
海洋学
统计
量子力学
人工神经网络
数学
作者
Xiaobing Yan,Zhenyu Zhou,Jianhui Zhao,Qi Liu,Hong Wang,Guoliang Yuan,Jingsheng Chen
出处
期刊:Nano Research
[Springer Science+Business Media]
日期:2017-09-04
卷期号:11 (3): 1183-1192
被引量:107
标识
DOI:10.1007/s12274-017-1781-2
摘要
Flexible memristor devices based on plastic substrates have attracted considerable attention due to their applications in wearable computers and integrated circuits. However, most plastic-substrate memristors cannot function or be grown in high-temperature environments. In this study, scotch-tape-exfoliated mica was used as the flexible memristor substrate in order to resolve these high-temperature issues. Our TiN/ZHO/IGZO memristor, which was constructed using a thin (10 μm) mica substrate, has superior flexibility and thermostability. After bending it 103 times, the device continues to exhibit exceptional electrical characteristics. It can also be implemented for transitions between high and low resistance states, even in temperatures of up to 300 °C. More importantly, the biological synaptic characteristics of paired-pulse facilitation/depression (PPF/PPD) and spike-timing-dependent plasticity (STDP) were observed through applying different pulse measurement modes. This work demonstrates that flexible memristor devices on mica substrates may potentially allow for the realization of high-temperature memristor applications for biologically-inspired computing systems.
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