Edge-Field-Suppression for Improved Breakdown and Leakage in Vertical β -Ga 2 O 3 Schottky Barrier Diode Through Trench Field Limiting Rings

In this article, high-performance gallium oxide (Ga2O3) Schottky diodes were fabricated by employing a suitable nonuniform trench field limiting rings (TFLRs) structure. Benefiting from the ability of the edge trench field-limiting ring (FLR) to effectively suppress and disperse the edge electric field, the reverse performance of the device is significantly enhanced. The devices exhibited excellent forward conduction characteristics, with a forward turn-on voltage of 1.51 V and forward resistance of 21.3 m$\Omega \cdot $cm2. With the inclusion of the TFLRs structure, the reverse breakdown voltage of the Ga2O3 Schottky diode increased significantly from 190 to 1010 V, and the reverse leakage decreased from$3.16\times 10^{-{8}}$to$6.21\times 10^{-{10}}$A/cm2. Additionally, TCAD simulation results further demonstrated effective suppression of the peak electric field at the anode edge of the devices with TFLRs. This research lays a solid foundation for creating higher-power Ga2O3 Schottky diodes.