材料科学
氮化镓
光电子学
纳米技术
图层(电子)
作者
Tengkun Li,Guoqiang Ren,Xujun Su,Kaihe Xie,Zhenghui Xia,Xiaodong Gao,Jianfeng Wang,Ke Xu
出处
期刊:CrystEngComm
[Royal Society of Chemistry]
日期:2022-01-01
卷期号:24 (48): 8525-8530
被引量:7
摘要
The evolution of pit-type defects in the Am-GaN growth of GaN on HVPE-GaN is investigated in this paper.
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