Integration of μLED and GaN 2T1C Circuit Based on Hydrogen-Treated p -GaN Technology

This work demonstrates integration of GaN micro-light emitting diode (μLED) and GaN 2T1C (two GaN transistors and one MIM capacitor) circuit based on p-GaN high-electron mobility transistor (HEMT). GaN HEMT is applied by hydrogen plasma treatment for normally-off operation with high uniformity, and provides injection current of 1.6 mA for μLED. Proposed 2T1C circuit achieves driving μLED under a scan rate of 100 kHz. Rise time and fall time of output voltage are 1.3 μs and 0.8 μs, which is beneficial to high refresh rate. Furthermore, μLED can be modulated in pulse amplitude modulation (PAM) operation mode by 2T1C circuit. The integrated configuration of GaN 2T1C and μLED has high current and fast response capabilities, benefiting high brightness and refresh rate, and showing use potential in fast switching, high-efficiency all-GaN μLED display.