Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing

神经形态工程学 亚氧化物 双层 材料科学 突触重量 记忆电阻器 蛋白质丝 拓扑(电路) 光电子学 氧化物 电导 纳米技术 计算机科学 人工神经网络 电子工程 硅 物理 电气工程 化学 凝聚态物理 人工智能 膜 复合材料 冶金 工程类 生物化学
作者
Dwipak Prasad Sahu,Kitae Park,Peter Hayoung Chung,Jimin Han,Tae‐Sik Yoon
出处
期刊:Scientific Reports [Nature Portfolio]
卷期号:13 (1): 9592-9592 被引量:54
标识
DOI:10.1038/s41598-023-36784-z
摘要

Abstract Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO 2 /HfO 2−x (oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO 2 /HfO 2−x synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems.
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