材料科学
铁电性
外延
范德瓦尔斯力
光电子学
极化(电化学)
凝聚态物理
纳米技术
电介质
化学
物理
量子力学
物理化学
图层(电子)
分子
作者
Michael J. Moody,Joshua T. Paul,Paul J. M. Smeets,Roberto dos Reis,Joon‐Seok Kim,Christopher Mead,J. Tyler Gish,Mark C. Hersam,Maria K. Y. Chan,Lincoln J. Lauhon
标识
DOI:10.1021/acsami.3c11931
摘要
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.
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