光电二极管
共发射极
图像传感器
光电子学
辐射
光刻胶
材料科学
光学
物理
作者
Tomoaki Masuzawa,Yoichiro Neo,Hidenori Mimura,Masayoshi Nagao,Masafumi Akiyoshi,Ikuji Takagi,Yasuhito Gotoh,Tamotsu Okamoto,Tomoya Igari,Nobuhiro Sato
标识
DOI:10.1109/ivnc.2018.8520056
摘要
A prototype image sensor is developed using cadmium telluride-based photodiode and a volcano-structured FEA. Radiation tolerance of each component was tested by irradiating gamma-ray using cobalt-60 source. Gamma-ray tolerance of up to 1.2 MGy was confirmed for both FEA and photodiode.
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