Fabrication and Analysis of a Novel High Voltage Heterojunction p-NiO/n-Ga2 O3 Diode

A novel heterojunction NiO/βGa2O3diode was fabricated using p-type NiO deposited by ion-assisted e-beam evaporation on n-type βGa2O3epitaxial wafer. The fabricated diodes exhibited excellent rectifying current-voltage characteristics, with rectifying ratio greater than 106at ± 4V. The breakdown voltage of the heterojunction diode was 525V for an un-terminated device. The measured specific on-resistance is 2.90m $\Omega\cdot cm^{2}$. The leakage current demonstrates one order of magnitude lower value than that of the comparison Ni/ βGa2O3Schottky barrier diode. The breakdown voltage of the heterojunction NiO/βGa2O3diodes is 4.5 times higher than that of the Ni/ βGa2O3Schottky barrier diode.