[Objective] This study aimed to explore the mutagenesis effects of N+ ion beam irradiation on Streptomyces albus and obtain high-yield salinomycin-producing strain.[Method] Streptomyces albus strain S-11-04 was mutated with different doses of N+ implantation.The effects of low energy N+ implantation on the survival rate,colony shape and salinomycin-producing ability were investigated.[Result] The results showed that low energy N+ implantation can efficiently improve the positive mutation rate of Streptomyces albus;13 mutant strains with high yield of salinomycin were isolated;mutant strain N3-6 has good inheritance and fermentation stability with four continuous generations,and the titres of salinomycin were increased by 41% in the shake-flask culture and 20.5% in mass production compared with the control.[Conclusion] N+ ion beam irradiation is an effective method to obtain high-yield salinomycin-producing Streptomyces albus strain.