Plasma chemical etching of silicon in mems - technology

In this work, the results for the modeling and experimental research of plasma chemical etching of Si are described. The model for the etching process is constructed. The results of accounts are given. The speed of Si etching, up to 6.5 /spl mu/m/min, experimentally is received. The etching of silicon is limited to a stage of chemical delivery of active particles to a surface Si, where there is a reaction of etching. The process can be used in MEMS-technology.