记忆电阻器
离子
材料科学
神经形态工程学
化学物理
离子键合
不对称
范德瓦尔斯力
反离子
极化(电化学)
纳米技术
分子动力学
光电子学
板层(表面解剖学)
物理
计算化学
计算机科学
分子
化学
人工神经网络
量子力学
物理化学
机器学习
复合材料
作者
Dhal Biswabhusan,Puzari Animesh,Li‐Hsien Yeh,K. Gopinadhan
标识
DOI:10.1021/acsami.4c14521
摘要
Memristors that mimic brain functions are crucial for energy-efficient neuromorphic devices. Ion channels that emulate biological synapses are still in the early stages of development, especially the tunability of memory states. Here, we demonstrate that cations such as K+, Na+, Ca2+, and Al3+ intercalated in the interlayer spaces of vermiculite result in highly confined channels of size 3–5 Å. They host exotic memristor properties through ion exchange dynamics, even at high salt concentrations of 1 M. The bipolar memristor characteristics observed are tunable with frequency, geometric asymmetry, ion concentration, and intercalants. Notably, we observe polarization-flipping memristor behavior in two cases: one with Al3+ ions and another with devices having a geometric asymmetry ratio greater than 15. This inversion is attributed to the overscreening of counterions due to their accumulation at the channel entrance. Our results suggest that ion exchange dynamics, ion–ion interactions, and ion accumulation/depletion mechanisms, particularly with multivalent ions, can be harnessed to develop advanced memristor devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI