光电流
材料科学
光电子学
光电探测器
纳米尺度
光电二极管
范德瓦尔斯力
纳米技术
肖特基势垒
二极管
物理
分子
量子力学
作者
Da Xu,Qiushi Liu,Boqun Liang,Ning Yu,Xuezhi Ma,Yaodong Xu,Takashi Taniguchi,Cong Ding,Roger K. Lake,Ruoxue Yan,Ming Liu
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2025-07-30
卷期号:11 (31): eadv7614-eadv7614
被引量:4
标识
DOI:10.1126/sciadv.adv7614
摘要
Integrated photodetectors are vital for their high speed, sensitivity, and low power consumption, with photocurrent driven by the photovoltaic and photothermoelectric (PTE) effects. At the nanoscale, these mechanisms overlap, complicating their separate evaluation. We introduce a 3D photocurrent nanoimaging technique to map these effects in a MoS2-Au Schottky photodiode, revealing a PTE-dominated region extending hundreds of nanometers from the electrode edge, enabled by weak electrostatic forces in two-dimensional materials. Unexpectedly, adding high-thermal conductivity hexagonal boron nitride enhances the PTE response by laterally redirecting heat, aligning thermal gradients with Seebeck coefficient variations, and boosting local conductance. This technique advances optoelectronic applications and deepens insights into light-matter interactions in low-dimensional systems, offering a powerful tool for designing efficient nanoscale photodetectors.
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