材料科学
聚偏氟乙烯
铁电性
衍射仪
复合材料
薄膜
微观结构
电容器
电场
压电
六氟丙烯
电压
光电子学
扫描电子显微镜
电介质
纳米技术
电气工程
聚合物
物理
工程类
量子力学
四氟乙烯
共聚物
作者
Jyotirmoy Roy,Raghavendar Chikkonda,Gara Kishor,Akhil Raman Thankamani Sathyanathan,K. S. Raju,R. B. Gangineni
摘要
Abstract In this article, the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride‐hexafluoropropylene ( PVDF‐HFP) thin films in Ag/Cu/PVDF‐HFP/Cu capacitor structures have been investigated. The bottom interfaces glass or Cu/glass influence upon the PVDF‐HFP thin‐film crystal structure and microstructure have been evaluated using grazing incidence X‐ray diffractometer and atomic force microscopy. Quasi‐static current–voltage loops, the polarization versus electric field loops measured at varied applied frequencies (100 mHz–1 Hz) and electric field amplitudes (2.5–27.5 MV/m) are utilized to comprehend the ferroelectric characteristics of PVDF‐HFP thin films. Furthermore, the observed linear dependency between coercive field and frequency is linked to the homogenous domain growth model proposed by Kolmogorov‐Avrami‐Ishibashi.
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