光电子学
材料科学
激光器
化学气相沉积
二极管
蓝宝石
量子阱
氮化物
量子阱激光器
蚀刻(微加工)
波长
金属有机气相外延
半导体激光器理论
活动层
发光二极管
激光二极管
半导体
电流密度
图层(电子)
光学
量子点激光器
外延
纳米技术
物理
量子力学
薄膜晶体管
作者
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takehiro Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto
摘要
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm 2 . The emission wavelength is the shortest one ever generated by a semiconductor laser diode.
科研通智能强力驱动
Strongly Powered by AbleSci AI