与非门
太比特
可扩展性
闪光灯(摄影)
计算机科学
计算机硬件
块(置换群论)
CMOS芯片
闪存
电子工程
频道(广播)
光电子学
嵌入式系统
材料科学
工程类
物理
光学
电信
数据库
波分复用
几何学
数学
波长
作者
Yoon Kim,Jang-Gn Yun,Se Hwan Park,Wandong Kim,Joo Yun Seo,Myounggon Kang,Kyung‐Chang Ryoo,Jeong‐Hoon Oh,Jong‐Ho Lee,Hyungcheol Shin,Byung‐Gook Park
标识
DOI:10.1109/ted.2011.2170841
摘要
Various critical issues related with 3-D stacked nand Flash memory are examined in this paper. Our single-crystalline STacked ARray (STAR) has many advantages such as better scalability, possibility of single-crystal channel, less sensitivity to 3-D interference, stable virtual source/drain characteristic, and more extendability over other stacked structures. With STAR, we proposed a unit 3-D structure, i.e., "building." Then, using this new component, 3-D block and full chip architecture are successfully designed. For the first time, the structure and operation methods of the "full" array are considered. The fully designed 3-D nand Flash architecture will be the novel solution of reliable 3-D stacked nand Flash memory for terabit density.
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