量子反常霍尔效应
拓扑绝缘体
凝聚态物理
磁场
拓扑(电路)
量子霍尔效应
霍尔效应
物理
绝缘体(电)
光电子学
量子力学
电气工程
工程类
作者
QiKun XUE,Ke He,Y. J. Wang
出处
期刊:Kexue tongbao
[Science China Press]
日期:2014-12-01
卷期号:59 (35): 3431-3441
被引量:2
标识
DOI:10.1360/n972014-00938
摘要
The quantum Hall effect (QHE) is a quantum phenomenon that occurs on a macroscopic length scale as the result of the non-trivial topological property of a two-dimensional electron system in a strong magnetic field. It has long been expected that QHE can be realized without an external magnetic field such that the effect can be applied in electric devices that consume little energy. The zero-magnetic-field QHE can appear in thin films of magnetic topological insulators as the quantized version of the anomalous Hall effect; i.e., the quantum anomalous Hall effect (QAHE). Here, we review how the ideas of the topological insulator and QAHE were developed and how the QAHE was finally experimentally realized in thin films of a magnetically doped topological insulator. We also discuss the prospect of application of the QAHE in low-energy-consuming devices.
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