Passively Q-switched microchip laser at 1.3 and 1.5 μm using semiconductor saturable absorber mirrors

We demonstrate a passively Q-switched diode-pumped 1.34 μm Nd:YV04 microchip laser. We achieved single-frequency, 230 ps pulses using a semiconductor saturable absorber mirror (SESAM). The pulse width and the repetition rate can be varied from 230 ps to 12 ns and 30 kHz to 4 MHz respectively, by changing the design parameters of the saturable absorber, the thickness of the crystal and the pump power. We also present preliminary results of passive Q-switching at 1.53 μm in an Er/Yb:Glass microchip system.