材料科学
氧化物
降级(电信)
悬空债券
氮化物
堆栈(抽象数据类型)
栅氧化层
压力(语言学)
电容器
金属浇口
快速热处理
热的
光电子学
复合材料
电子工程
硅
图层(电子)
电气工程
冶金
晶体管
工程类
哲学
气象学
电压
计算机科学
程序设计语言
物理
语言学
作者
Heung Jae Cho,Se‐Aug Jang,Yong Soo Kim,Kwan-Yong Lim,Jae Geun Oh,Jung Ho Lee,Tae Su Park,Tae Sun Back,Jun Mo Yang,Hong Seon Yang,Hyunchul Sohn,Jinwoong Kim
摘要
We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WN x /polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2 /Si interface, resulting in the degradation of the gate oxide.
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