Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Gain, loss and alpha-factor were measured in broad stripe 1.23 mum InGaAs and 1.29 mum InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and alpha-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers