Polariton light-emitting diode in a GaAs-based microcavity

Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light-emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to $100\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.