钝化
材料科学
透射电子显微镜
腐蚀
高分辨率透射电子显微镜
硅
PID控制器
降级(电信)
晶体硅
光电子学
冶金
纳米技术
电气工程
图层(电子)
物理
工程类
热力学
温度控制
作者
Kai Sporleder,Volker Naumann,Jan Bauer,Susanne Richter,Angelika Hähnel,Stephan Großer,Marko Turek,Christian Hagendorf
标识
DOI:10.1016/j.solmat.2019.110062
摘要
Abstract Potential induced degradation (PID) of solar cells can severely reduce a PV module's performance. In case of bifacial solar cells, the rear side is another source of PID as was found for industrially produced bifacial PERC solar cells from three different manufacturers. It is shown that a rear-side PID test can lead to more than 12% power degradation. The observed PID mechanisms are not completely recoverable implying long-term losses under field operation. This new, non-recoverable PID effects are characterized by a locally increased recombination at the rear side of the cells. From nano-scale analytics by means of transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectroscopy (EDXS) are performed and PID related defects are traced back to a local Si corrosion and delamination of the passivation layers. At the Si passivation interface an increased amount of SiOx, Na and further impurities are found that indicate an electrochemically driven corrosion process under cathodic conditions.
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