ChemInform Abstract: Heteroepitaxy of InP on Si Substrates by MOCVD.

Abstract InP epilayers and GaAs intermediate layers are grown on Si substrates by chemical vapor deposition using trimethylindium and trimethylgallium as metalorganic precursors and AsH 3 and PH 3 as sources for As and P. It is demonstrated that the crystalline quality of InP is improved by optimizing the GaAs layer thickness and thermal cycle annealing after film growth.