欧姆接触
等离子体
材料科学
蚀刻(微加工)
分析化学(期刊)
图层(电子)
光电子学
接受者
等离子体刻蚀
二极管
化学
纳米技术
凝聚态物理
物理
量子力学
色谱法
作者
Shangru Zhou,Yu Ding,Zhe Zhuang,Yimeng Sang,Kai Chen,Feifan Xu,Jie-Xiang Yu,Tao Tao,Ting Zhi,Hai Lu,R. Zhang,Bin Liu
标识
DOI:10.1088/1361-6641/ad3e26
摘要
Abstract We investigated the optimization effects of KOH solution treatment and SiNx sacrificial layer treatment on the contact characteristics of V/Al/Ni/Au on plasma-etched n-AlGaN. The results show that the contacts on n-Al 0.5 Ga 0.5 N with both surface treatments are truly Ohmic in nature, while the contacts on untreated plasma-etched samples are still rectifying. Surface atomic concentration analysis revealed that both surface treatment methods effectively reduced the nitrogen vacancies on n-AlGaN induced by plasma etching, which mostly act as acceptor-like states, leading to severe compensation and hindering of the formation of Ohmic contact. Moreover, the operating voltage was reduced to 1.3 V at 1 A/cm 2 for 285-nm ultraviolet light-emitting diodes, demonstrating that the surface treatment could work well for plasma-etched n-AlGaN Ohmic contacts.
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