材料科学
半导体
光电子学
化合物半导体
纳米技术
作者
Qingliang Feng,Yiming Zhu,Jinhua Hong,Mei Zhang,Wenjie Duan,Nannan Mao,Juanxia Wu,Hua Xu,Fengzhong Dong,Fang Lin,Chuanhong Jin,Chunming Wang,Jin Zhang,Liming Xie
标识
DOI:10.1002/adma.201470114
摘要
Alloying in monolayers enables bandgap tuning in twodimensions. On page 2648, L. Xie, J. Zhang, and co-workers demonstrate that by direct evaporation of two end materials (MoS2 and MoSe2) and deposition at low temperatures, large-area 2D MoS2(1−x)Se2x monolayers are obtained. By changing the S/Se composition, the bandgap of MoS2(1−x)Se2x monolayers can be continuously tuned.
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