27‐3: Invited Paper: High‐k hybrid gate dielectrics for flexible, low‐voltage thin‐film transistors

With the rapid development of science and technology, flexible thin film transistors (TFTs) have attracted extensive attention in a number of cutting‐edge fields, including flex ible display technology, wearable health monitoring equipme nt and human‐computer interaction interfaces due to their e xcellent high signal‐to‐noise ratio and skin adhesion. Currently, high‐quality hybrid dielectrics composed of inorganic a nd organic materials has been thought to be promising can didate for the gate insulator layer, which exhibit excellent c omplementary properties involving the flexibility of organic component and high dielectric constant (high‐k) of inorgani c component. In this work, two types of hybrid dielectrics, i. e., zirconia‐based hybrid dielectrics and thermoplastic uretha ne‐based composite dielectrics were fabricated by controlling network structure and composition ratio. Both the two diel ectrics possessed exceptional performance such as high‐k va lue (>10), low leakage current density (縐‐7 A/cm 2 ), and la rge areal capacitance density, which enabled flexible TFTs t o operate at a relatively low voltage. It indicated that our h ybrid dielectrics have the potential to be employed in low‐vo ltage flexible TFTs for low‐power flexible electronics.