Reinforcing Photogenerated Carrier Extraction of Environment‐Friendly InP/ZnSeS Quantum Dots for High‐Performing Photoelectrochemical Photodetection and Solar Energy Conversion

Colloidal InP/ZnSeS-based quantum dots (QDs) are considered promising building blocks for light-emitting devices due to their environmental friendliness, high quantum yield (QY), and narrow emission. However, the intrinsic type-I band structure severely hinders potential photoelectrochemical (PEC) applications requiring efficient photoexcited carrier separation and transfer. In this study, the optoelectronic properties of InP/ZnSeS QDs are tailored by introducing Al dopants in the ZnSeS layer, which concurrently passivate the surface defects and act as shallow donor states for suppressed non-radiative recombination and improved charge extraction efficiency. Consequently, as-fabricated InP/ZnSeS:Al QDs-based PEC-type photodetector exhibited a high detectivity up to 10