High threshold voltage enhancement-mode AlGaN/GaN HEMT with double barrier hybrid gate

This work presents a novel enhancement-mode hybrid p-type gate AlGaN/GaN high electron mobility transistor (HEMT) with a double barrier structure. The double barrier hybrid-gate (DBHG) HEMT yields better performance than the traditional p-GaN gate HEMTs in terms of threshold voltage and breakdown voltage, which can be attributed to the regulation of the interface electric field in the AlGaN barrier layers. Moreover, the simulated results indicate that the DBHG HEMT exhibits a high threshold voltage of 1.8 V and a breakdown voltage of 995 V. In addition, we discussed the influence of the thickness of each layer in the double barrier layer structure on device performance. This work provides valuable insights for future innovations in the structure design of HEMTs.