Two dimensional (2D) Janus Transition Metal
Dichalcogenides (TMDs) are a new class of atomically thin polar
materials. In these materials, the top and the bottom atomic layer
are made of different chalcogen atoms. To date, several theoretical
studies have shown that a broken mirror symmetry induces a colossal
electrical field in these materials, which leads to unusual quantum
properties. Despite these new properties, the current knowledge in
their synthesis is limited only through two independent studies;
both works rely on high-temperature processing techniques and are
specific to only one type of 2D Janus material - MoSSe. Therefore,
there is an urgent need for the development of a new synthesis
method to (1) Extend the library of Janus class materials. (2)
Improve the quality of 2D crystals. (3) Enable the synthesis of
Janus heterostructures. The central hypothesis in this work is that
the processing temperature of 2D Janus synthesis can be
significantly lowered down to room temperatures by using reactive
hydrogen and sulfur radicals while stripping off selenium atoms
from the 2D surface. To test this hypothesis, a series of
controlled growth studies were performed, and several complementary
characterization techniques were used to establish a
process–structure-property relationship. The results show that the
newly proposed approach, namely Selective Epitaxy and Atomic
Replacement (SEAR), is effective in reducing the growth temperature
down to ambient conditions. The proposed technique benefits in
achieving highly crystalline 2D Janus layers with an excellent
optical response. Further studies herein show that this technique
can form highly sophisticated lateral and vertical heterostructures
of 2D Janus layers. Overall results establish an entirely new
growth technique for 2D Janus.layers, which pave ways for the
realization of exciting quantum effects in these materials such as
Fulde–Ferrell–Larkin–Ovchinnikov (FFLO) state, Majorana fermions,
and topological p-wave superconductors.