结晶度
溅射
材料科学
退火(玻璃)
薄膜晶体管
薄膜
光电子学
晶体管
化学工程
分析化学(期刊)
纳米技术
图层(电子)
复合材料
化学
色谱法
电气工程
工程类
电压
作者
Shinya Imai,Takuya Hamada,Masaya Hamada,Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Tetsuya Tatsumi,Shigetaka Tomiya,Kazuo Tsutsui,Hitoshi Wakabayashi
标识
DOI:10.35848/1347-4065/abdcae
摘要
Abstract The MoS 2 film for chip-size area was synthesized by two step processes consisting of MoS 2 -compound sputtering and post sulfurization. We intentionally revealed that the crystallinity of sulfurized MoS 2 film depends on that of just-after-sputtered film. Therefore, a crystallinity improvement just-after sputtering is mandatory to achieve an excellent quality MoS 2 film after sulfur-vapor annealing for thin film transistor, sensor and human interface device applications.
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