纳米线
光电探测器
材料科学
光电导性
光电子学
光敏性
半导体
探测器
半导体纳米结构
纳米技术
纳米结构
光学
物理
作者
Cesare Soci,Arthur Zhang,Xinyu Bao,Hongkwon Kim,Yu‐Hwa Lo,Deli Wang
标识
DOI:10.1166/jnn.2010.2157
摘要
The use of nanowires and nanowire structures as photodetectors is an emerging research topic. Despite the large amount of reports on nanowire photoresponse that appeared in the literature over the last decade, the mechanism leading to high photosensitivity and photoconductive gain in high aspect ratio nanostructures has been elucidated only recently. Novel device architectures integrated in single nanowire devices are also being actively studied and developed. In this article, the general nanowire photodetector concepts are reviewed, together with a detailed description of the physical phenomena occurring in nanowire photoconductors and phototransistors, with some examples from recent experimental results obtained in our groups. An outlook on future directions toward the use of semiconductor nanowire photoconductors as intrachip interconnects, single-photon detectors, and image sensors, is also given.
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