P‐24: High‐Temperature (250°C) Amorphous‐Silicon TFT's On Clear Plastic Substrates

Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.