薄脆饼
材料科学
硅
电压
光电子学
电极
电介质
晶片键合
静电学
电气工程
工程类
化学
物理化学
作者
K. Asano,F. Hatakeyama,K. Yatsuzuka
标识
DOI:10.1109/tia.2002.1003438
摘要
Mechanical holding systems of a wafer might cause serious problems in the semiconductor industry. Electrostatic wafer handling might be one of the possible solutions for such problems. The authors have investigated an attractive force on a silicon wafer by using an electrostatic chuck which consists of interdigitated electrodes and a dielectric thin film. Electrostatic attractive force increases as the applied voltage increases, and with a thinner dielectric layer. With the narrower width and spacing of interdigitated electrodes, the stronger electrostatic force is obtained. When 1-mm width and spacing interdigitated electrodes and 50-/spl mu/m-thick polymer film are used, the strongest force obtained was about 17 N in the vertical direction at 3.5 kV, for a 4-in silicon wafer. When DC high voltage is used, some residual force remains, even after the applied voltage is removed. This was overcome by using variable-frequency AC high voltage.
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